Wet Etching Recipes

From UCSB Nanofab Wiki
Revision as of 10:40, 6 November 2013 by Bovington j (talk | contribs) (The Master Table of Wet Etching (Include All Materials))
Jump to: navigation, search


Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example

The Master Table of Wet Etching (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 400K ~2.2 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 400K(1:4) ~1.6 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) NH4OH:H2O2:H2O (1:2:50) ~<0.5 High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) H2O2:NH4OH:H2O (2:1:50) ~<0.5 High Measured in-house Rate slows with time JTB Example

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)