Difference between revisions of "Wet Etching Recipes"
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=Compound Semiconductor Etching= |
=Compound Semiconductor Etching= |
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| − | [http://www.sciencedirect.com/science/article/pii/S0927796X00000279 |
+ | [http://www.sciencedirect.com/science/article/pii/S0927796X00000279 Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks, |
=Metal Etching= |
=Metal Etching= |
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Revision as of 13:02, 6 November 2013
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
Metal Etching
Silicon etching
Dielectric etching
Organic removal
Gold Plating
Chemi-Mechanical Polishing (CMP)
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| Al2O3 (ALD Plasma 300C) | 300MIF | ~1.6 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | 400K | ~2.2 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | 400K(1:4) | ~1.6 | High | Measured in-house | Rate slows with time, Selective to most non-Al Materials | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | NH4OH:H2O2:H2O (1:2:50) | ~<0.5 | High | Measured in-house | Rate slows with time | JTB | Example | ||
| Al2O3 (ALD Plasma 300C) | H2O2:NH4OH:H2O (2:1:50) | ~<0.5 | High | Measured in-house | Rate slows with time | JTB | Example |