Revision as of 13:00, 6 November 2013

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example

The Master Table of Wet Etching (Include All Materials)

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
Al2O3 (ALD Plasma 300C)	300MIF	~1.6			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	400K	~2.2			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	400K(1:4)	~1.6			High	Measured in-house	Rate slows with time, Selective to most non-Al Materials	JTB	Example
Al2O3 (ALD Plasma 300C)	NH4OH:H2O2:H2O (1:2:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example
Al2O3 (ALD Plasma 300C)	H2O2:NH4OH:H2O (2:1:50)	~<0.5			High	Measured in-house	Rate slows with time	JTB	Example

@@ Line 51: / Line 51: @@
 | InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example
 |-
-| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 ||  || Most non-Al Materials || High || Measured in-house || Rate slows with time || JTB || Example
+| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 ||  ||  || High || Measured in-house || Rate slows with time, Selective to most non-Al Materials || JTB || Example
 |-
-| Al2O3 (ALD Plasma 300C)|| 400K || ~2.2 ||  || Most non-Al Materials || High || Measured in-house || Rate slows with time || JTB || Example
+| Al2O3 (ALD Plasma 300C)|| 400K || ~2.2 ||  || || High || Measured in-house || Rate slows with time, Selective to most non-Al Materials || JTB || Example
 |-
-| Al2O3 (ALD Plasma 300C)|| 400K(1:4) || ~1.6 ||  || Most non-Al Materials || High || Measured in-house || Rate slows with time || JTB || Example
+| Al2O3 (ALD Plasma 300C)|| 400K(1:4) || ~1.6 ||  || || High || Measured in-house || Rate slows with time, Selective to most non-Al Materials || JTB || Example
 |-
 | Al2O3 (ALD Plasma 300C)|| NH4OH:H2O2:H2O (1:2:50) || ~<0.5 ||  ||  || High || Measured in-house || Rate slows with time || JTB || Example

Difference between revisions of "Wet Etching Recipes"