Difference between revisions of "Wet Etching Recipes"

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(The Master Table of Wet Etching (Include All Materials))
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=Compound Semiconductor Etching=
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[http://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&ved=0CC4QFjAA&url=http%3A%2F%2Fwww.nanofab.ubc.ca%2Ffiles%2Fclawson2001_iii-v_etching.pdf&ei=pIp6UobsOOTjiAKIw4G4Cw&usg=AFQjCNHo1MN8BZJmexnKIwpn92Rax6N5Lg&sig2=RK4rXPfIeJgcQEH5HkqWWw&bvm=bv.56146854,d.cGE Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
   
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=Metal Etching=
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=Silicon etching=
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=Dielectric etching=
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=Organic removal=
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=Gold Plating=
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=Chemi-Mechanical Polishing (CMP)=
   
   
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| Al2O3 (ALD Plasma 300C)|| H2O2:NH4OH:H2O (2:1:50) || ~<0.5 || || || High || Measured in-house || Rate slows with time || JTB || Example
 
| Al2O3 (ALD Plasma 300C)|| H2O2:NH4OH:H2O (2:1:50) || ~<0.5 || || || High || Measured in-house || Rate slows with time || JTB || Example
 
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=Compound Semiconductor Etching=
 
[http://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&ved=0CC4QFjAA&url=http%3A%2F%2Fwww.nanofab.ubc.ca%2Ffiles%2Fclawson2001_iii-v_etching.pdf&ei=pIp6UobsOOTjiAKIw4G4Cw&usg=AFQjCNHo1MN8BZJmexnKIwpn92Rax6N5Lg&sig2=RK4rXPfIeJgcQEH5HkqWWw&bvm=bv.56146854,d.cGE Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,
 
 
=Metal Etching=
 
 
=Silicon etching=
 
 
=Dielectric etching=
 
 
=Organic removal=
 
 
=Gold Plating=
 
 
=Chemi-Mechanical Polishing (CMP)=
 

Revision as of 11:41, 6 November 2013

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example

The Master Table of Wet Etching (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 400K ~2.2 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 400K(1:4) ~1.6 Most non-Al Materials High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) NH4OH:H2O2:H2O (1:2:50) ~<0.5 High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) H2O2:NH4OH:H2O (2:1:50) ~<0.5 High Measured in-house Rate slows with time JTB Example