Difference between revisions of "Wet Etching Recipes"

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(Example Wet Etching Table)
(The Master Table of Wet Etching (Include All Materials))
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| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example
 
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAsP || High || [[http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)]] || Example || Jon Doe || Example
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example
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| Al2O3 (ALD Plasma 300C)|| 300MIF || ~1.6 || || Most non-Al Materials || High || None || Rate slows with time || JTB || Example
 
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Revision as of 10:36, 6 November 2013


Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example

The Master Table of Wet Etching (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High [Lamponi (p.102)] Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High [Lamponi (p.102)] Example Jon Doe Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High None Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High None Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High None Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 Most non-Al Materials High None Rate slows with time JTB Example

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)