Difference between revisions of "Wafer Coating Process Traveler1"

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=== '''1. Unaxis deposition - 300nm of  SiO2 LDR film @250°C''' ===
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Unaxis_SOP_3-30-2020.docx
  
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a) Prepare three 4” wafers:
  +
  +
·     for seasoning (regular Si wafer ~500nm thick)
  +
  +
·     for deposition (your wafer for deposition)
  +
  +
·     for cleaning ( Si thick wafer~0.8-1um)
  +
  +
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  +
  +
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe.
  +
  +
Seasoning recipe name: '''SiO2 seasoning''', '''t=2min'''
  +
  +
Deposition recipe name: S'''iO2 LDR 250°C''', '''t=780 sec'''
  +
  +
Cleaning recipe name: '''Post dep PD''', '''t=900sec'''
  +
  +
d) Run the job (name the job/select the wafer, execute the job)
  +
  +
You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
  +
  +
·     There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
  +
  +
e) Unload wafers ONLY when all runs are finished.
  +
  +
'''2. Unaxis SiO2 HDR @250°C deposition'''
  +
  +
a) Prepare three 4” wafers:
  +
  +
·     for seasoning (regular Si wafer ~500nmthick)
  +
  +
·     for deposition (your wafer for deposition)
  +
  +
·     for cleaning ( Si thick wafer~0.8-1um )
  +
  +
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  +
  +
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe.
  +
  +
Seasoning recipe name: '''SiO2 seasoning, t=2min'''
  +
  +
Deposition recipe name: '''SiO2 HDR 250°C''', '''t=180 sec'''
  +
  +
Cleaning recipe name: '''Post dep PD''', '''t=900sec'''
  +
  +
d) Run the job (name the job/select the wafer, execute the job)
  +
  +
You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
  +
  +
·     There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
  +
  +
e) Unload wafers ONLY when all runs are finished.
  +
  +
'''3. Unaxis SiN @250°C deposition'''
  +
  +
a) Prepare three 4” wafers:
  +
  +
·     for seasoning (regular Si wafer ~500nmthick)
  +
  +
·     for deposition (your wafer for deposition)
  +
  +
·     for cleaning ( Si thick wafer~0.8-1um)
  +
  +
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  +
  +
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe.
  +
  +
Seasoning recipe name: '''SiN seasoning''', '''t=5min'''
  +
  +
Deposition recipe name: '''SiN 250°C, t=480 sec'''
  +
  +
Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''
  +
  +
d) Run the job (name the job/select the wafer, execute the job)
  +
  +
You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
  +
  +
e) Unload wafers ONLY when all runs are finished.
  +
  +
4. '''Unaxis SiN LS @250°C''' '''deposition'''
  +
  +
a) Prepare three 4”wafers:
  +
  +
·     for seasoning (regular Si wafer ~500nmthick)
  +
  +
·     for deposition (your wafer for deposition)
  +
  +
·     for cleaning ( Si thick wafer~0.8-1um )
  +
  +
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  +
  +
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe.
  +
  +
Seasoning recipe name: '''SiN seasoning''', '''t=2min'''
  +
  +
Deposition recipe name: '''SiN LS''' '''250°C''', '''t=180 sec'''
  +
  +
Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''
  +
  +
d) Run the job (name the job/select the wafer, execute the job)
  +
  +
You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
  +
  +
e) Unload wafers ONLY when all runs are finished.

Revision as of 12:53, 30 March 2020

1. Unaxis deposition - 300nm of  SiO2 LDR film @250°C

a) Prepare three 4” wafers:

·     for seasoning (regular Si wafer ~500nm thick)

·     for deposition (your wafer for deposition)

·     for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name: SiO2 LDR 250°C, t=780 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (name the job/select the wafer, execute the job)

You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

·     There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers ONLY when all runs are finished.

2. Unaxis SiO2 HDR @250°C deposition

a) Prepare three 4” wafers:

·     for seasoning (regular Si wafer ~500nmthick)

·     for deposition (your wafer for deposition)

·     for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name: SiO2 HDR 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (name the job/select the wafer, execute the job)

You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

·     There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers ONLY when all runs are finished.

3. Unaxis SiN @250°C deposition

a) Prepare three 4” wafers:

·     for seasoning (regular Si wafer ~500nmthick)

·     for deposition (your wafer for deposition)

·     for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=5min

Deposition recipe name: SiN 250°C, t=480 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (name the job/select the wafer, execute the job)

You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

4. Unaxis SiN LS @250°C deposition

a) Prepare three 4”wafers:

·     for seasoning (regular Si wafer ~500nmthick)

·     for deposition (your wafer for deposition)

·     for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=2min

Deposition recipe name: SiN LS 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (name the job/select the wafer, execute the job)

You can repeat the previous step for each wafer. This way after loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

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