Difference between revisions of "Wafer Coating Process Traveler"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 42: Line 42:
  
 
=== Unaxis deposition - 300nm SiN film @250°C ===
 
=== Unaxis deposition - 300nm SiN film @250°C ===
 +
'''SiN- Silicon Nitride'''
 +
 
a) Prepare three 4” wafers:
 
a) Prepare three 4” wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for seasoning (regular Si wafer ~500nm thick)

Revision as of 13:24, 22 April 2020

Unaxis deposition - SiO2 LDR film @250°C

SiO2 LDR- Oxide Low Deposition Rate

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 LDR 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiO2 HDR film @250°C

SiO2 HDR- Oxide High Deposition Rate

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 HDR 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN film @250°C

SiN- Silicon Nitride

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=5min
  • Deposition recipe name: SiN 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN LS film @250°C

SiN LS - Silicon Nitride Low Stress

a) Prepare three 4”wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=2min
  • Deposition recipe name: SiN LS 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.