Difference between revisions of "Wafer Coating Process Traveler"

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(→‎Unaxis deposition - SiO2 LDR film @250°C: correction on Unaxis recipes)
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=== Unaxis deposition - SiO2 LDR film @250°C ===
 
=== Unaxis deposition - SiO2 LDR film @250°C ===
 +
'''SiO2 LDR- Oxide Low Deposition Rate'''
 +
 
a) Prepare three 4” wafers:
 
a) Prepare three 4” wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for seasoning (regular Si wafer ~500nm thick)
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=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
 
=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
 +
'''SiO2 HDR- Oxide High Deposition Rate'''
 +
 
a) Prepare three 4” wafers:
 
a) Prepare three 4” wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for seasoning (regular Si wafer ~500nm thick)
Line 29: Line 33:
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
* Seasoning recipe name: SiO2 seasoning, t=2min
 
* Seasoning recipe name: SiO2 seasoning, t=2min
* Deposition recipe name: SiO2 HDR 250°C, t=180 sec
+
* Deposition recipe name: SiO2 HDR 250°C, t=VARIABLE sec
* Cleaning recipe name: Post dep PD, t=900sec
+
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
 +
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
 +
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR] 
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
  
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c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
* Seasoning recipe name: SiN seasoning, t=5min
 
* Seasoning recipe name: SiN seasoning, t=5min
* Deposition recipe name: SiN 250°C, t=480 sec
+
* Deposition recipe name: SiN 250°C, t=VARIABLE sec
* Cleaning recipe name: Post dep PD, t=1500sec
+
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
 +
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
 +
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR]
 
d) Run the job (name the job/select the wafer, execute the job)
 
d) Run the job (name the job/select the wafer, execute the job)
  
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=== Unaxis deposition - 300nm SiN LS film @250°C ===
 
=== Unaxis deposition - 300nm SiN LS film @250°C ===
 +
'''SiN LS - Silicon Nitride Low Stress'''
 +
 
a) Prepare three 4”wafers:
 
a) Prepare three 4”wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for seasoning (regular Si wafer ~500nm thick)
Line 65: Line 75:
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
* Seasoning recipe name: SiN seasoning, t=2min
 
* Seasoning recipe name: SiN seasoning, t=2min
* Deposition recipe name: SiN LS 250°C, t=180 sec
+
* Deposition recipe name: SiN LS 250°C, t=VARIABLE sec
* Cleaning recipe name: Post dep PD, t=1500sec
+
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
 +
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
 +
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR]
 
d) Run the job (name the job/select the wafer, execute the job)
 
d) Run the job (name the job/select the wafer, execute the job)
  

Revision as of 11:10, 22 April 2020

Unaxis deposition - SiO2 LDR film @250°C

SiO2 LDR- Oxide Low Deposition Rate

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 LDR 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiO2 HDR film @250°C

SiO2 HDR- Oxide High Deposition Rate

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 HDR 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN film @250°C

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=5min
  • Deposition recipe name: SiN 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN LS film @250°C

SiN LS - Silicon Nitride Low Stress

a) Prepare three 4”wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=2min
  • Deposition recipe name: SiN LS 250°C, t=VARIABLE sec
  • Cleaning recipe name: Post dep PD, t=VARIABLE sec

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.