Difference between revisions of "Wafer Coating Process Traveler"

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Line 7: Line 7:
  
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
+
* Seasoning recipe name: SiO2 seasoning, t=2min
Seasoning recipe name: SiO2 seasoning, t=2min
+
* Deposition recipe name: SiO2 LDR 250°C, t=780 sec
Deposition recipe name: SiO2 LDR 250°C, t=780 sec
+
* Cleaning recipe name: Post dep PD, t=900sec
Cleaning recipe name: Post dep PD, t=900sec
 
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
  
Line 21: Line 20:
 
=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
 
=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
 
a) Prepare three 4” wafers:
 
a) Prepare three 4” wafers:
 
+
* for seasoning (regular Si wafer ~500nm thick)
for seasoning (regular Si wafer ~500nm thick)
+
* for deposition (your wafer for deposition)
for deposition (your wafer for deposition)
+
* for cleaning ( Si thick wafer~0.8-1um )
for cleaning ( Si thick wafer~0.8-1um )
 
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
+
* Seasoning recipe name: SiO2 seasoning, t=2min
Seasoning recipe name: SiO2 seasoning, t=2min
+
* Deposition recipe name: SiO2 HDR 250°C, t=180 sec
Deposition recipe name: SiO2 HDR 250°C, t=180 sec
+
* Cleaning recipe name: Post dep PD, t=900sec
Cleaning recipe name: Post dep PD, t=900sec
 
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
  
Line 42: Line 39:
 
=== Unaxis deposition - 300nm SiN film @250°C ===
 
=== Unaxis deposition - 300nm SiN film @250°C ===
 
a) Prepare three 4” wafers:
 
a) Prepare three 4” wafers:
 
+
* for seasoning (regular Si wafer ~500nm thick)
for seasoning (regular Si wafer ~500nm thick)
+
* for deposition (your wafer for deposition)
for deposition (your wafer for deposition)
+
* for cleaning ( Si thick wafer~0.8-1um)
for cleaning ( Si thick wafer~0.8-1um)
 
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
+
* Seasoning recipe name: SiN seasoning, t=5min
Seasoning recipe name: SiN seasoning, t=5min
+
* Deposition recipe name: SiN 250°C, t=480 sec
Deposition recipe name: SiN 250°C, t=480 sec
+
* Cleaning recipe name: Post dep PD, t=1500sec
Cleaning recipe name: Post dep PD, t=1500sec
 
 
d) Run the job (name the job/select the wafer, execute the job)
 
d) Run the job (name the job/select the wafer, execute the job)
  
Line 61: Line 56:
 
=== Unaxis deposition - 300nm SiN LS film @250°C ===
 
=== Unaxis deposition - 300nm SiN LS film @250°C ===
 
a) Prepare three 4”wafers:
 
a) Prepare three 4”wafers:
 
+
* for seasoning (regular Si wafer ~500nm thick)
for seasoning (regular Si wafer ~500nm thick)
+
* for deposition (your wafer for deposition)
for deposition (your wafer for deposition)
+
* for cleaning ( Si thick wafer~0.8-1um )
for cleaning ( Si thick wafer~0.8-1um )
 
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
  
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
+
* Seasoning recipe name: SiN seasoning, t=2min
Seasoning recipe name: SiN seasoning, t=2min
+
* Deposition recipe name: SiN LS 250°C, t=180 sec
Deposition recipe name: SiN LS 250°C, t=180 sec
+
* Cleaning recipe name: Post dep PD, t=1500sec
Cleaning recipe name: Post dep PD, t=1500sec
 
 
d) Run the job (name the job/select the wafer, execute the job)
 
d) Run the job (name the job/select the wafer, execute the job)
  

Revision as of 12:45, 30 March 2020

Unaxis deposition - 300nm SiO2 LDR film @250°C

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 LDR 250°C, t=780 sec
  • Cleaning recipe name: Post dep PD, t=900sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiO2 HDR film @250°C

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiO2 seasoning, t=2min
  • Deposition recipe name: SiO2 HDR 250°C, t=180 sec
  • Cleaning recipe name: Post dep PD, t=900sec

There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN film @250°C

a) Prepare three 4” wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um)

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=5min
  • Deposition recipe name: SiN 250°C, t=480 sec
  • Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN LS film @250°C

a) Prepare three 4”wafers:

  • for seasoning (regular Si wafer ~500nm thick)
  • for deposition (your wafer for deposition)
  • for cleaning ( Si thick wafer~0.8-1um )

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name: SiN seasoning, t=2min
  • Deposition recipe name: SiN LS 250°C, t=180 sec
  • Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.