Difference between revisions of "Wafer Coating Process Traveler"

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=== Unaxis deposition - SiO2 LDR film @250°C ===
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There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)
a) Prepare three 4” wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for deposition (your wafer for deposition)
 
* for cleaning ( Si thick wafer~0.8-1um)
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
  
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
+
=== Standard Oxide Deposition ===
* Seasoning recipe name: SiO2 seasoning, t=2min
 
* Deposition recipe name: SiO2 LDR 250°C, t=VARIABLE sec
 
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
 
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
 
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/ICP-PECVD_(Unaxis_VLR)#Documentation cleaning  time in Operating Procedure] .
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
 
  
d) Run the job (name the job/select the wafer, execute the job)
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==== STD SiO2 ====
 +
#Log in to Advanced PECVD #2
 +
#Seasoning
 +
#*Load the seasoning recipe (STD SiO2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
 +
#Deposition
 +
#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 +
#*Pump down.
 +
#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
 +
#*Unload the wafer.
 +
#Cleaning
 +
#*Wipe sidewall first with DI water, followed by IPA.
 +
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
 +
#*Log out
 +
=== Standard Nitride Deposition ===
  
After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.  
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==== STD Nitride2 ====
 +
#Log in to Advanced PECVD #2
 +
#Seasoning
 +
#*Load the seasoning recipe (STD Nitride2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
 +
#Deposition
 +
#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 +
#*Pump down.
 +
#*Load the deposition recipe (STD Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
 +
#*Unload the wafer.
 +
#Cleaning
 +
#*Wipe sidewall first with DI water, followed by IPA.
 +
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
 +
#*Log out
  
e) Unload wafers ONLY when all runs are finished.
+
=== Standard Low Stress Deposition  ===
  
=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
+
==== STD LS Nitride2 ====
a) Prepare three 4” wafers:
+
#Log in to Advanced PECVD #2
* for seasoning (regular Si wafer ~500nm thick)
+
#Seasoning
* for deposition (your wafer for deposition)
+
#*Load the seasoning recipe (STD LS Nitride2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
* for cleaning ( Si thick wafer~0.8-1um )
+
#Deposition
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
+
#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 +
#*Pump down.
 +
#*Load the deposition recipe (STD LS Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
 +
#*Unload the wafer.
 +
#Cleaning
 +
#*Wipe sidewall first with DI water, followed by IPA.
 +
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
 +
#*Log out
  
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
+
#
* Seasoning recipe name: SiO2 seasoning, t=2min
 
* Deposition recipe name: SiO2 HDR 250°C, t=180 sec
 
* Cleaning recipe name: Post dep PD, t=900sec
 
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
 
 
 
d) Run the job (name the job/select the wafer, execute the job)
 
 
 
After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
 
 
 
e) Unload wafers ONLY when all runs are finished.
 
 
 
=== Unaxis deposition - 300nm SiN film @250°C ===
 
a) Prepare three 4” wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for deposition (your wafer for deposition)
 
* for cleaning ( Si thick wafer~0.8-1um)
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
 
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
* Seasoning recipe name: SiN seasoning, t=5min
 
* Deposition recipe name: SiN 250°C, t=480 sec
 
* Cleaning recipe name: Post dep PD, t=1500sec
 
d) Run the job (name the job/select the wafer, execute the job)
 
 
 
After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
 
 
 
e) Unload wafers ONLY when all runs are finished.
 
 
 
=== Unaxis deposition - 300nm SiN LS film @250°C ===
 
a) Prepare three 4”wafers:
 
* for seasoning (regular Si wafer ~500nm thick)
 
* for deposition (your wafer for deposition)
 
* for cleaning ( Si thick wafer~0.8-1um )
 
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
 
 
 
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
 
* Seasoning recipe name: SiN seasoning, t=2min
 
* Deposition recipe name: SiN LS 250°C, t=180 sec
 
* Cleaning recipe name: Post dep PD, t=1500sec
 
d) Run the job (name the job/select the wafer, execute the job)
 
 
 
After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
 
 
 
e) Unload wafers ONLY when all runs are finished.
 

Latest revision as of 16:54, 22 April 2020

There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)

Standard Oxide Deposition

STD SiO2

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD SiO2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Nitride Deposition

STD Nitride2

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD Nitride2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD Nitride2), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Low Stress Deposition

STD LS Nitride2

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD LS Nitride2), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD LS Nitride2), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out