Difference between revisions of "Wafer Bonder (SUSS SB6-8E)"
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+ | {{tool2|{{PAGENAME}} |
|picture=WaferBonder.jpg |
|picture=WaferBonder.jpg |
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|type = Thermal Processing |
|type = Thermal Processing |
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| − | |super= |
+ | |super= Aidan Hopkins |
| + | |super2= Lee Sawyer |
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|phone=(805)839-3918x216 |
|phone=(805)839-3918x216 |
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|location=Bay 7 |
|location=Bay 7 |
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|toolid=41 |
|toolid=41 |
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}} |
}} |
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| − | = |
+ | =About= |
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers. |
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers. |
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=Detailed Specifications= |
=Detailed Specifications= |
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| + | |||
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity |
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity |
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*Upper and lower heating of samples |
*Upper and lower heating of samples |
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*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen |
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen |
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| − | *Sample size: pieces to 6” wafers, aligned bonding by using MA/BA-6 aligner |
+ | *Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup. |
*Anodic bonding to 2000 V |
*Anodic bonding to 2000 V |
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*Windows-based computer control |
*Windows-based computer control |
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*Wafer bonder currently set up for 4" wafers |
*Wafer bonder currently set up for 4" wafers |
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| + | =Documentation= |
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| + | *[https://wiki.nanofab.ucsb.edu/w/images/1/12/Bonder_Pressure_Rules_Vis_Aid.docx Bonder Pressure Rules Visual Aid] |
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| + | *[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines] |
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Latest revision as of 10:53, 20 September 2023
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About
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.
Detailed Specifications
- Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
- Upper and lower heating of samples
- 5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
- Sample size: pieces to 6” wafers, aligned bonding by using the MA/BA-6 aligner - contact supervisor for setup.
- Anodic bonding to 2000 V
- Windows-based computer control
- Wafer bonder currently set up for 4" wafers