Difference between revisions of "Vapor HF Etch"

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= About  =
 
= About  =
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C.  The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.
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The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C.  The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> undercut-etch-rate from low to high. The SiO<sub>2</sub> undercut-etch-rate is from ~10nm/min to ~350nm/min.
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=Documentation=
 
=Documentation=
*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]
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*[[media:SPTS-Primaxx uEtch Presentation-a.pdf|System Manual Part A]]
*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual]]
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*[[media:SPTS-Primaxx uEtch Presentation-b.pdf|System Manual Part B]]
*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]
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*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]
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=Recipes=
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* See the [https://wiki.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29 Vapor HF Recipes] page for recipe specific to this tool.
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* See the general [[Dry Etching Recipes]] page for a table of all etch recipes across all tools.

Revision as of 18:34, 6 April 2020

Vapor HF Etch
IMG 2416 1.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Mike Silva
Supervisor Phone (805) 893-3096
Supervisor E-Mail silva@ece.ucsb.edu
Description Vapor HF Etcher
Manufacturer SPTS Inc
Dry Etch Recipes
Sign up for this tool


About

The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO2 layer below) with the use of Al2O3, Al or some other metal as an etch mask at 45oC. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N2 gases and can process small sample(s) (on a 8" Si carrier wafer) up to an 8" wafer. There are 5 standard etch recipes installed in the tool with the SiO2 undercut-etch-rate from low to high. The SiO2 undercut-etch-rate is from ~10nm/min to ~350nm/min.

Documentation

Recipes