Difference between revisions of "Unaxis wafer coating procedure"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(notes about 0.5µm max. dep, and particle counting)
Line 1: Line 1:
 +
=== Important Notes ===
 +
* Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.
 +
* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.
 +
** If you note abnormally high particle counts (>200), run chamber clean/season and retry.  If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)|tool supervisor]].
 +
 
=== '''1. Unaxis SiO2 LDR @250C deposition''' ===
 
=== '''1. Unaxis SiO2 LDR @250C deposition''' ===
 
a) Prepare wafers:
 
a) Prepare wafers:

Revision as of 00:13, 16 July 2020

Important Notes

  • Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.
  • We highly recommend using the Surfscan particle counter to monitor particle counts on look-ahead wafers prior to deposition.
    • If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the tool supervisor.

1. Unaxis SiO2 LDR @250C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in these recipes.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name:  SiO2 LDR 250°C, t=780 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

·      There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers when all runs are finished.

2. Unaxis SiO2 HDR @250°C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name: SiO2 HDR 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

·      There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers when all runs are finished.

3. Unaxis SiN @250°C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=5min

Deposition recipe name: SiN 250°C, t=480 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers when all runs are finished.

4. Unaxis SiN LS @250°C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=2min

Deposition recipe name: SiN LS 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers when all runs are finished.