Difference between revisions of "Unaxis wafer coating procedure"
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| + | === Important Notes === |
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| − | === '''1. Unaxis deposition - 300nm of SiO2 LDR film @250°C''' === |
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| + | * Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts. |
||
| + | * See the [[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|'''ICP-PECVD Unaxis Recipes''' page]] for thin-film properties of each of the following recipes. |
||
| + | * We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition. |
||
| + | ** You must measure particle count wafers '''before''' and after the deposition. See the procedures on the [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan page]]. |
||
| + | ** If you note abnormally high particle counts (>200): |
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| + | *** Run chamber clean |
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| + | *** Chamber season on a clean test wafer |
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| + | *** Retest Particle counts |
||
| + | **** If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)|tool supervisor]]. |
||
| + | * For new recipes (as of Dec. 2019), users may '''only edit <u>Deposition Time</u>''', no other recipe modifications or customizations are permitted without staff approval. |
||
| + | |||
| + | === Unaxis SiO2 Low Dep. Rate @250C deposition === |
||
a) Prepare wafers: |
a) Prepare wafers: |
||
| + | * Regular 4 " Si wafer ~500µm thick for seasoning |
||
| − | |||
| + | * Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer) |
||
| − | · Regular 4 " Si wafer ~500nm think for seasoning |
||
| + | * Thick 4" Si wafer~(0.8-1mm) for cleaning |
||
| − | |||
| − | · Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier) |
||
| − | |||
| − | · Thick 4" Si wafer~(0.8-1um) for cleaning |
||
| − | |||
b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
||
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in these recipes. |
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in these recipes. |
||
| + | * Seasoning recipe name: '''SiO2 seasoning''', '''t=2min''' |
||
| − | |||
| + | ** There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls. |
||
| − | Seasoning recipe name: '''SiO2 seasoning''', '''t=2min''' |
||
| + | * Deposition recipe name: '''SiO2 LDR 250°C, t=780 sec''' |
||
| − | |||
| − | + | * Cleaning recipe name: '''Post dep PD''', '''t=900sec''' |
|
| − | |||
| − | Cleaning recipe name: '''Post dep PD''', '''t=900sec''' |
||
| − | |||
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
||
| + | * You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | · There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls. |
||
| − | |||
e) Unload wafers when all runs are finished. |
e) Unload wafers when all runs are finished. |
||
| − | + | === Unaxis SiO2 High Dep Rate 250°C deposition === |
|
| − | |||
a) Prepare wafers: |
a) Prepare wafers: |
||
| + | * Regular 4 " Si wafer ~500µm thick for seasoning |
||
| − | |||
| + | * Your substrate for deposition (if smaller than 4", needs to be loaded on a Si carrier wafer) |
||
| − | · Regular 4 " Si wafer ~500nm think for seasoning |
||
| + | * Thick 4" Si wafer ~(0.8-1mm) for cleaning |
||
| − | |||
| − | · Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier) |
||
| − | |||
| − | · Thick 4" Si wafer~(0.8-1um) for cleaning |
||
| − | |||
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
||
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
||
| + | * Seasoning recipe name: '''SiO2 seasoning, t=2min''' |
||
| − | |||
| + | ** There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls. |
||
| − | Seasoning recipe name: '''SiO2 seasoning, t=2min''' |
||
| + | * Deposition recipe name: '''SiO2 HDR 250°C''', '''t=180 sec''' |
||
| − | |||
| − | + | * Cleaning recipe name: '''Post dep PD''', '''t=900sec''' |
|
| − | |||
| − | Cleaning recipe name: '''Post dep PD''', '''t=900sec''' |
||
| − | |||
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
||
| + | * You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | · There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls. |
||
| − | |||
e) Unload wafers when all runs are finished. |
e) Unload wafers when all runs are finished. |
||
| − | + | === Unaxis SiN 250°C deposition === |
|
| − | |||
a) Prepare wafers: |
a) Prepare wafers: |
||
| + | * Regular 4 " Si wafer ~500µm thick for seasoning |
||
| − | |||
| + | * Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer) |
||
| − | · Regular 4 " Si wafer ~500nm think for seasoning |
||
| + | * Thick 4" Si wafer ~(0.8-1mm) for cleaning |
||
| − | |||
| − | · Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier) |
||
| − | |||
| − | · Thick 4" Si wafer~(0.8-1um) for cleaning |
||
| − | |||
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
||
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
||
| + | * Seasoning recipe name: '''SiN seasoning''', '''t=5min''' |
||
| − | |||
| − | + | * Deposition recipe name: '''SiN 250°C, t=480 sec''' |
|
| + | * Cleaning recipe name: '''Post dep PD,''' '''t=1500sec''' |
||
| − | |||
| − | Deposition recipe name: '''SiN 250°C, t=480 sec''' |
||
| − | |||
| − | Cleaning recipe name: '''Post dep PD,''' '''t=1500sec''' |
||
| − | |||
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
||
| + | * You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
e) Unload wafers when all runs are finished. |
e) Unload wafers when all runs are finished. |
||
| − | + | === Unaxis SiN Low-Stress 250°C deposition === |
|
| − | |||
a) Prepare wafers: |
a) Prepare wafers: |
||
| + | * Regular 4 " Si wafer ~500µm thick for seasoning |
||
| − | |||
| + | * Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer) |
||
| − | · Regular 4 " Si wafer ~500nm think for seasoning |
||
| + | * Thick 4" Si wafer ~(0.8-1mm) for cleaning |
||
| − | |||
| − | · Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier) |
||
| − | |||
| − | · Thick 4" Si wafer~(0.8-1um) for cleaning |
||
| − | |||
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers. |
||
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
c) Edit '''standard recipes''' (for seasoning, deposition, and cleaning). You can '''ONLY change the time''' in the recipe. |
||
| + | * Seasoning recipe name: '''SiN seasoning''', '''t=2min''' |
||
| − | |||
| − | + | * Deposition recipe name: '''SiN LS''' '''250°C''', '''t=180 sec''' |
|
| + | * Cleaning recipe name: '''Post dep PD,''' '''t=1500sec''' |
||
| − | |||
| − | Deposition recipe name: '''SiN LS''' '''250°C''', '''t=180 sec''' |
||
| − | |||
| − | Cleaning recipe name: '''Post dep PD,''' '''t=1500sec''' |
||
| − | |||
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end. |
||
| + | * You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
| − | You should monitor process at the very beginning to make sure there are no any issues with the run. |
||
| − | |||
e) Unload wafers when all runs are finished. |
e) Unload wafers when all runs are finished. |
||
Latest revision as of 21:29, 12 August 2020
Important Notes
- Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.
- See the ICP-PECVD Unaxis Recipes page for thin-film properties of each of the following recipes.
- We highly recommend using the Surfscan particle counter to monitor particle counts on look-ahead wafers prior to deposition.
- You must measure particle count wafers before and after the deposition. See the procedures on the Surfscan page.
- If you note abnormally high particle counts (>200):
- Run chamber clean
- Chamber season on a clean test wafer
- Retest Particle counts
- If particle counts are still high, notify the tool supervisor.
- For new recipes (as of Dec. 2019), users may only edit Deposition Time, no other recipe modifications or customizations are permitted without staff approval.
Unaxis SiO2 Low Dep. Rate @250C deposition
a) Prepare wafers:
- Regular 4 " Si wafer ~500µm thick for seasoning
- Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
- Thick 4" Si wafer~(0.8-1mm) for cleaning
b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in these recipes.
- Seasoning recipe name: SiO2 seasoning, t=2min
- There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
- Deposition recipe name: SiO2 LDR 250°C, t=780 sec
- Cleaning recipe name: Post dep PD, t=900sec
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.
- You should monitor process at the very beginning to make sure there are no any issues with the run.
e) Unload wafers when all runs are finished.
Unaxis SiO2 High Dep Rate 250°C deposition
a) Prepare wafers:
- Regular 4 " Si wafer ~500µm thick for seasoning
- Your substrate for deposition (if smaller than 4", needs to be loaded on a Si carrier wafer)
- Thick 4" Si wafer ~(0.8-1mm) for cleaning
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.
- Seasoning recipe name: SiO2 seasoning, t=2min
- There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
- Deposition recipe name: SiO2 HDR 250°C, t=180 sec
- Cleaning recipe name: Post dep PD, t=900sec
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.
- You should monitor process at the very beginning to make sure there are no any issues with the run.
e) Unload wafers when all runs are finished.
Unaxis SiN 250°C deposition
a) Prepare wafers:
- Regular 4 " Si wafer ~500µm thick for seasoning
- Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
- Thick 4" Si wafer ~(0.8-1mm) for cleaning
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.
- Seasoning recipe name: SiN seasoning, t=5min
- Deposition recipe name: SiN 250°C, t=480 sec
- Cleaning recipe name: Post dep PD, t=1500sec
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.
- You should monitor process at the very beginning to make sure there are no any issues with the run.
e) Unload wafers when all runs are finished.
Unaxis SiN Low-Stress 250°C deposition
a) Prepare wafers:
- Regular 4 " Si wafer ~500µm thick for seasoning
- Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
- Thick 4" Si wafer ~(0.8-1mm) for cleaning
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.
- Seasoning recipe name: SiN seasoning, t=2min
- Deposition recipe name: SiN LS 250°C, t=180 sec
- Cleaning recipe name: Post dep PD, t=1500sec
d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.
- You should monitor process at the very beginning to make sure there are no any issues with the run.
e) Unload wafers when all runs are finished.