Unaxis VLR Etch - Process Control Data

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Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec) Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (InP/SiO2)	Comments	SEM Images
3/30/22	NP_Unaxis_02	1413	14.6		[1] [2]
3/9/22	NP_Unaxis_01	1297	15.3		[1] [2]