Difference between revisions of "Unaxis VLR Etch - Process Control Data"

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(→‎Data - InP Ridge Etch (Unaxis VLR): updated chamber conditioning)
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|[https://wiki.nanotech.ucsb.edu/w/images/3/3e/Unaxis_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/71/Unaxis_01_CS_001.jpg <nowiki>[2]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/3/3e/Unaxis_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/71/Unaxis_01_CS_001.jpg <nowiki>[2]</nowiki>]
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|-
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|11/8/2021
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|InP#2102
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|1.24
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|13.8
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|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf][https://wiki.nanotech.ucsb.edu/w/images/4/49/IP210212.pdf]
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|2/3/2021
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|InP#2101
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|1.30
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|16
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|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]
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|-
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|8/30/2020
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|InP#2001
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|1.11
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|10.4
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|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]
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|1/31/2019
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|InP#1901
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|0.88
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|9.7
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
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|12/10/2018
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|InP#1809
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|1.01
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|11.4
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|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
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|10/3/2018
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|InP#1808
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|1.01
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|13.7
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
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|8/7/2018
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|InP#1807
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|0.81
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|8.0
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|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
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|5/22/2018
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|InP#1806
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|0.88
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|8.4
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
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|4/26/2018
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|InP#1805
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|1.29
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|13.6
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|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
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|4/10/2018
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|InP#1804
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|1.12
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|12.8
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|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
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|4/5/2018
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|InP#1803
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|1.05
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|11.9
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|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
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|3/1/2018
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|InP#1802
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|0.96
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|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
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|1/2/2018
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|InP#1801
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|1.44
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|14.3
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|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
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|12/7/2017
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|InP#1714
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|0.96
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|10.4
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|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
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|11/21/2017
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|InP#1713
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|1.04
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|12.1
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|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
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|10/23/2017
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|InP#1712
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|1.11
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|13.1
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|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
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|10/11/2017
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|InP#1711
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|1
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|11
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|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
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|8/28/2017
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|InP#1710
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|1
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|11.7
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|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
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|8/16/2017
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|InP#1709
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|0.76
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|8
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|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
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|7/6/2017
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|InP#1708
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|0.98
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|12.1
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|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
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|5/19/2017
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|InP#1707
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|0.82
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|9.9
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|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
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|-
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|5/4/2017
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|InP#1706
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|0.84
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|11
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|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
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|4/20/2017
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|inP#1705
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|0.88
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|10.2
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|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
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|3/21/2017
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|InP#1704
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|1.01
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|11.3
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|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
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|-
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|2/21/2017
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|InP#1703
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|0.91
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|11.3
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
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|-
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|2/7/2017
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|InP#1702
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|0.75
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|7.7
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|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
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|-
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|1/23/2017
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|InP#1701
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|0.93
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|9.4
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
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|-
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|12/15/2016
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|InP#1615
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|0.91
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|9.3
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
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|-
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|12/1/2016
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|InP#1614
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|0.96
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|12.1
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
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|-
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|10/4/2016
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|InP#1613
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|0.92
 +
|8.9
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|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
 
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Revision as of 11:08, 27 April 2022

UnderConstruction.jpg

Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)

Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
3/30/22 NP_Unaxis_02 1413 14.6 [1] [2]
3/9/22 NP_Unaxis_01 1297 15.3 [1] [2]
11/8/2021 InP#2102 1.24 13.8 [1][2]
2/3/2021 InP#2101 1.30 16 [3][4]
8/30/2020 InP#2001 1.11 10.4 [5]
1/31/2019 InP#1901 0.88 9.7 [6][7]
12/10/2018 InP#1809 1.01 11.4 [8]
10/3/2018 InP#1808 1.01 13.7 [9]
8/7/2018 InP#1807 0.81 8.0 [10]
5/22/2018 InP#1806 0.88 8.4 [11]
4/26/2018 InP#1805 1.29 13.6 [12]
4/10/2018 InP#1804 1.12 12.8 [13]
4/5/2018 InP#1803 1.05 11.9 [14]
3/1/2018 InP#1802 0.96 9 [15]
1/2/2018 InP#1801 1.44 14.3 [16]
12/7/2017 InP#1714 0.96 10.4 [17]
11/21/2017 InP#1713 1.04 12.1 [18]
10/23/2017 InP#1712 1.11 13.1 [19]
10/11/2017 InP#1711 1 11 [20]
8/28/2017 InP#1710 1 11.7 [21]
8/16/2017 InP#1709 0.76 8 [22]
7/6/2017 InP#1708 0.98 12.1 [23]
5/19/2017 InP#1707 0.82 9.9 [24]
5/4/2017 InP#1706 0.84 11 [25]
4/20/2017 inP#1705 0.88 10.2 [26]
3/21/2017 InP#1704 1.01 11.3 [27]
2/21/2017 InP#1703 0.91 11.3 [28]
2/7/2017 InP#1702 0.75 7.7 [29]
1/23/2017 InP#1701 0.93 9.4 [30]
12/15/2016 InP#1615 0.91 9.3 [31]
12/1/2016 InP#1614 0.96 12.1 [32]
10/4/2016 InP#1613 0.92 8.9 [33]