Difference between revisions of "Unaxis VLR Etch - Process Control Data"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (started to enter etch recipe in to cal table)
m (edited recipe on Unaxis Process control data)
Line 4: Line 4:
 
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]  
 
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]  
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''':    °C, mT, W/W, Cl2=, H2=, CH4=sccm, time=1min30sec (90sec)
+
| colspan="6" |'''InP Ridge Etch''':    °C, mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2sccm, time=1min30sec (90sec)
 
Sample Size: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.
 
Sample Size: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.
 
|-
 
|-

Revision as of 11:20, 21 April 2022

UnderConstruction.jpg

Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: °C, mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2sccm, time=1min30sec (90sec)

Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
3/30/22 NP_Unaxis_02 1413 14.6 [1] [2]
3/9/22 NP_Unaxis_01 1297 15.3 [1] [2]