Difference between revisions of "Unaxis VLR Etch - Process Control Data"
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
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− | | colspan="6" |'''InP Ridge Etch''': TO BE ADDED |
+ | | colspan="6" |'''InP Ridge Etch''': TO BE ADDED 90s Etch |
Sample Size: EXAMPLE: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
Sample Size: EXAMPLE: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
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|SEM Images |
|SEM Images |
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+ | |3/30/22 |
+ | |NP_Unaxis_02 |
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− | |<small>EXAMPLE ONLY</small> |
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+ | |1413 |
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− | |~400nm |
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+ | |14.6 |
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− | |240 nm left |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>] |
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+ | |- |
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+ | |3/9/22 |
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+ | |NP_Unaxis_01 |
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+ | |1297 |
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+ | |15.3 |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/3/3e/Unaxis_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/71/Unaxis_01_CS_001.jpg <nowiki>[2]</nowiki>] |
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Revision as of 11:34, 20 April 2022
Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
Data - InP Ridge Etch (Unaxis VLR)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: TO BE ADDED 90s Etch
Sample Size: EXAMPLE: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
3/30/22 | NP_Unaxis_02 | 1413 | 14.6 | [1] [2] | |
3/9/22 | NP_Unaxis_01 | 1297 | 15.3 | ~30-40% SiO2 masking (NingC's pattern) | [1] [2] |