Difference between revisions of "Unaxis VLR Etch - Process Control Data"
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==Data - InP Ridge Etch (Unaxis VLR)== |
==Data - InP Ridge Etch (Unaxis VLR)== |
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
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{| class="wikitable" |
{| class="wikitable" |
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| − | | colspan="6" |'''InP Ridge Etch''': |
+ | | colspan="6" |'''InP Ridge Etch''': TO BE ADDED |
| − | Sample Size: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
+ | Sample Size: EXAMPLE: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
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|Date |
|Date |
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|Comments |
|Comments |
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|SEM Images |
|SEM Images |
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| ⚫ | |||
| − | |3/30/22 |
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| − | |NP_60c_004 |
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| − | |427 |
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| − | |11.17 |
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| − | |*etched for 3min* |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>] |
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| − | |- |
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| − | |1/26/22 |
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| − | |NP_1_26_003 |
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| − | |452 |
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| − | |260-280nm left |
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| − | |~30-40% SiO<sub>2</sub> masking (NingC's pattern) |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>] |
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|1/26/22 |
|1/26/22 |
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| − | |<small> |
+ | |<small>EXAMPLE ONLY</small> |
|~400nm |
|~400nm |
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|240 nm left |
|240 nm left |
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|~30-40% SiO<sub>2</sub> masking (NingC's pattern) |
|~30-40% SiO<sub>2</sub> masking (NingC's pattern) |
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| ⚫ | |||
| − | |[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>] |
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Revision as of 13:09, 15 April 2022
 Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
Data - InP Ridge Etch (Unaxis VLR)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
| InP Ridge Etch: TO BE ADDED
Sample Size: EXAMPLE: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
| 1/26/22 | EXAMPLE ONLY | ~400nm | 240 nm left | ~30-40% SiO2 masking (NingC's pattern) | |