Difference between revisions of "Unaxis VLR Etch - Process Control Data"

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==Data - InP Ridge Etch (Unaxis VLR)==
  
==Data - InP Ridge Etch (Unaxis VLR)==
 
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
 
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
 
{| class="wikitable"
  
{| class="wikitable"
  +
|- bgcolor="#fcfcfc"
 
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
  
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
 
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.
  
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.
   
 
''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
  
''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
  +
|- bgcolor="#e4e7ed"
  ⚫
|'''Date'''
  ⚫
|'''Sample#'''
  ⚫
|'''Etch Rate (nm/min)'''
  ⚫
|'''Etch Selectivity (InP/SiO2)'''
  ⚫
|'''Comments'''
  ⚫
|'''SEM Images'''
 
|-
  
|-
  +
|11/18/22
⚫
|Date
  
  +
|ND_Unaxis_03
⚫
|Sample#
  
  +
|800
⚫
|Etch Rate (nm/min)
  
  +
|45.3
⚫
|Etch Selectivity (InP/SiO2)
  
  +
|Only slightly less PR etched led to extremely high selectivity.
⚫
|Comments
  
  +
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/30D_unaxis_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/cd/CS_unaxis_111822_003.jpg <nowiki>[CS]</nowiki>]
⚫
|SEM Images
  
  ⚫
|-
  +
|11/11/22
  +
|ND_Unaxis_02
  +
|760
  +
|24.5
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/73/30D_unaxis_111122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/bf/CS_unaxis_111122_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/30/22
  +
|ND_Unaxis_01
  +
|760
  +
|22.1
  +
|etch rate is correct, previous rates are
  +
  +
taken in microns/min
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/78/30D_unaxis_09302022_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/f/fe/CS_unaxis_093022_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|4/28/22
  +
|NP_Unaxis_03
  +
|1.51
  +
|22.2
  +
|Normal profile - vertical and smooth.
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/ae/Unaxis_03_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a8/Unaxis_03_CS_003.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
 
|3/30/22
  
|3/30/22
 
|NP_Unaxis_02
  
|NP_Unaxis_02
  +
|1.41
−
|1413
  
 
|14.6
  
|14.6
  +
|Strong undercut!
⚫
|
  
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
 
|3/9/22
  
|3/9/22
 
|NP_Unaxis_01
  
|NP_Unaxis_01
  +
|1.30
−
|1297
  
 
|15.3
  
|15.3
 
|
  
|

Latest revision as of 18:41, 21 November 2022

Data - InP Ridge Etch (Unaxis VLR)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)

Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
11/18/22 ND_Unaxis_03 800 45.3 Only slightly less PR etched led to extremely high selectivity. [30D][CS]
11/11/22 ND_Unaxis_02 760 24.5 [30D] [CS]
9/30/22 ND_Unaxis_01 760 22.1 etch rate is correct, previous rates are

taken in microns/min

[30D][CS]
4/28/22 NP_Unaxis_03 1.51 22.2 Normal profile - vertical and smooth. [1] [2]
3/30/22 NP_Unaxis_02 1.41 14.6 Strong undercut! [1] [2]
3/9/22 NP_Unaxis_01 1.30 15.3 [1] [2]
11/8/2021 InP#2102 1.24 13.8 [1][2]
2/3/2021 InP#2101 1.30 16 [3][4]
8/30/2020 InP#2001 1.11 10.4 [5]
1/31/2019 InP#1901 0.88 9.7 [6][7]
12/10/2018 InP#1809 1.01 11.4 [8]
10/3/2018 InP#1808 1.01 13.7 [9]
8/7/2018 InP#1807 0.81 8.0 [10]
5/22/2018 InP#1806 0.88 8.4 [11]
4/26/2018 InP#1805 1.29 13.6 [12]
4/10/2018 InP#1804 1.12 12.8 [13]
4/5/2018 InP#1803 1.05 11.9 [14]
3/1/2018 InP#1802 0.96 9 [15]
1/2/2018 InP#1801 1.44 14.3 [16]
12/7/2017 InP#1714 0.96 10.4 [17]
11/21/2017 InP#1713 1.04 12.1 [18]
10/23/2017 InP#1712 1.11 13.1 [19]
10/11/2017 InP#1711 1 11 [20]
8/28/2017 InP#1710 1 11.7 [21]
8/16/2017 InP#1709 0.76 8 [22]
7/6/2017 InP#1708 0.98 12.1 [23]
5/19/2017 InP#1707 0.82 9.9 [24]
5/4/2017 InP#1706 0.84 11 [25]
4/20/2017 inP#1705 0.88 10.2 [26]
3/21/2017 InP#1704 1.01 11.3 [27]
2/21/2017 InP#1703 0.91 11.3 [28]
2/7/2017 InP#1702 0.75 7.7 [29]
1/23/2017 InP#1701 0.93 9.4 [30]
12/15/2016 InP#1615 0.91 9.3 [31]
12/1/2016 InP#1614 0.96 12.1 [32]
10/4/2016 InP#1613 0.92 8.9 [33]
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