Difference between revisions of "UV Ozone Reactor"
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| − | {{ |
+ | {{tool2|{{PAGENAME}} |
|picture=Ozone.jpg |
|picture=Ozone.jpg |
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|type = Dry Etch |
|type = Dry Etch |
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|super= Lee Sawyer |
|super= Lee Sawyer |
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| + | |super2= Tony Bosch |
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| − | |model= |
+ | |model=144AX |
|location=Bay 5 |
|location=Bay 5 |
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| − | |description = UV Ozone |
+ | |description = UV Ozone Cleaner |
|manufacturer = Jelight |
|manufacturer = Jelight |
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}} |
}} |
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==About== |
==About== |
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| + | UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment. |
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| − | The UV Ozone is manufactured by Jelight, model M-144AX. It can be used for Oxygen activation, etching or oxidation of a surface without ion bombardment. |
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==Documentation== |
==Documentation== |
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| + | *[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP] |
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| − | *[[UV Ozone Quick Start|Quick Start]] |
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*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual] |
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual] |
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Latest revision as of 09:17, 29 August 2023
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About
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.