Revision as of 23:56, 15 November 2017

Thermal Oxidation of Silicon

Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.

Please see Calculators + Utilities page for links to these oxidation calculators.

Thermal oxidation recipes for Wet (H2O vapor) and Dry (O2 gas) oxidation up to 1050°C are available on the TyStar 8300 system.

Numerous research groups perform wafer bonding using either the Suss Wafer Bonder or a custom graphite fixture and any one of numerous ovens, such as the N2-purged Wafer Bonding Furnace (with glove box) or N2-purged Blue M oven.

The EVG Plasma Activation system and Goniometer allow for surface prep/inspection prior to bonding.

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 =Thermal Oxidation of Silicon=
+Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
+Please see [[Calculators + Utilities]] page for links to these oxidation calculators.
+Thermal oxidation recipes for Wet (H2O vapor) and Dry (O2 gas) oxidation up to 1050°C are available on the [[Tube Furnace (Tystar 8300)|TyStar 8300 system]].
 =Wafer Substrate Bonding=
+Numerous research groups perform wafer bonding using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]] or a custom graphite fixture and any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]].
+The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer]] allow for surface prep/inspection prior to bonding.
 [[Category:Processing]]