Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)"
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(Created page with "{| class="wikitable" | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged...") |
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| + | https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2.pdf |
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Revision as of 08:28, 9 October 2018
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#01 | 95.2 | 0.74 | 77.9 |
https://www.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2.pdf