Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)"
Jump to navigation
Jump to search
(add data) |
(Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/") |
||
| (12 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
{| class="wikitable" |
{| class="wikitable" |
||
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
||
| + | | |
||
|- |
|- |
||
|Date |
|Date |
||
| Line 7: | Line 8: | ||
|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
||
|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
||
| + | |SEM Images |
||
|- |
|- |
||
|10/5/2018 |
|10/5/2018 |
||
| Line 13: | Line 15: | ||
|0.74 |
|0.74 |
||
|77.9 |
|77.9 |
||
| ⚫ | |||
|- |
|- |
||
| − | |1/28/ |
+ | |1/28/2019 |
|I21902 |
|I21902 |
||
|92.1 |
|92.1 |
||
|0.77 |
|0.77 |
||
| |
| |
||
| + | |[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf] |
||
| + | |- |
||
| + | |3/6/2019 |
||
| + | |I21903 |
||
| + | |88.5 |
||
| + | |0.80 |
||
| + | |79.4 |
||
| + | |[https://wiki.nanotech.ucsb.edu/wiki/images/d/dc/SiO2_Etch_using_ICP2_with_O2-3-06-2019.pdf] |
||
| + | |- |
||
| + | |7/12/2019 |
||
| + | |I21906 |
||
| + | |91.9 |
||
| + | |0.69 |
||
| + | |78.1 |
||
| + | |[https://wiki.nanotech.ucsb.edu/wiki/images/0/04/I2190605.pdf] |
||
|} |
|} |
||
| ⚫ | |||