Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)"

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| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
  
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|Date
  
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|Etch Selectivity (SiO2/PR)
  
|Etch Selectivity (SiO2/PR)
 
|Averaged Sidewall Angle (<sup>o</sup>)
  
|Averaged Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
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|10/5/2018
  
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|0.74
  
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|1/28/2019
  
|1/28/2019
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|0.77
  
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|[https://www.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf]
 
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[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2-a.pdf]
  

Revision as of 00:03, 30 January 2019

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9
1/28/2019 I21902 92.1 0.77 [1]
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