Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)"

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{| class="wikitable"
 
| colspan="5" |ICP#1:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
 
| colspan="5" |ICP#1:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|
 
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|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
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|1/28/2019
 
|1/28/2019
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|0.63
 
|0.63
 
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|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
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|5/29/2019
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|I11904
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|71.1
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|0.58
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
 
|}
 
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[https://www.nanotech.ucsb.edu/wiki/index.php/File:I11902.pdf]
 

Latest revision as of 17:31, 6 April 2020

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [1]
5/29/2019 I11904 71.1 0.58 [2]