Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)"

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(add a data table)
 
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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#2:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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| colspan="5" |ICP#1:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|
 
|-
 
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|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|SEM Images
 
|-
 
|-
|10/5/2018
+
|1/28/2019
|SiO2#01
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|I11902
|95.2
+
|78.1
|0.74
+
|0.63
|77.9
+
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
 +
|-
 +
|5/29/2019
 +
|I11904
 +
|71.1
 +
|0.58
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
 
|}
 
|}

Latest revision as of 17:31, 6 April 2020

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [1]
5/29/2019 I11904 71.1 0.58 [2]