Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)"

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[https://www.nanotech.ucsb.edu/wiki/index.php/File:I11902.pdf]

Revision as of 10:58, 29 January 2019

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
1/28/19 I11902 78.1 0.63

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