Test Data of etching SiO2 with CHF3/CF4-ICP1

**ICP#1 Recipe:** 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
8/5/2022	ND_Pan 1_080522	115.1	0.90		[30D] [CS]
7/27/2022	ND_Pan1_072722	134.6	1.12		[CS] [30D]
5/10/2022	NP_ICP1_07	146	1.34		[1] [2]
4/26/2022	NP_ICP1_06	139.4	1.36		[1] [2]
4/20/2022	NP_ICP1_05	140	1.13		[1] [2]
4/13/2022	NP_ICP1_04	140.3	1.24		[1] [2]
3/29/2022	NP_ICP1_03	136.9	1.19		[1][2]
3/8/2022	NP_ICP1_02	133.7	1.12		[1] [2]
3/2/2022	NP_ICP1_01	141.4	1.20		[1] [2]
1/7/2021	I12101	118	1.12		[1]
3/3/2020	I12004	110	1.05		[2]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".
2/28/2020	I12003	119	1.17	56.6	[3]
1/23/2020	I12002	109	1.16		[4]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/13/2020	I12001	78.0	1.06	unusual - two regions	[5]
5/29/2019	I11903	105	1.41		[6]
1/28/2019	I11901	110	1.35	see SEM →	[7]

Alternate SiO₂ etch recipe with O2 included.

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