Test Data of etching SiO2 with CHF3/CF4-ICP1
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|ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec|
|Date||Sample#||Etch Rate (nm/min)||Etch Selectivity (SiO2/PR)||Averaged Sidewall Angle (o)||SEM Images|
|Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".|
|Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested.|