Test Data of etching SiO2 with CHF3/CF4-ICP1
Jump to navigation
Jump to search
The printable version is no longer supported and may have rendering errors. Please update your browser bookmarks and please use the default browser print function instead.
ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11901 | 110 | 1.35 | [1] | |
5/29/2019 | I11903 | 105 | 1.41 | [2] | |
1/13/2020 | I12001 | 78.0 | 1.06 | [3] | |
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
1/23/2020 | I12002 | 109 | 1.16 | [4] | |
2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [5] |
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. | |||||
3/3/2020 | I12004 | 110 | 1.05 | [6] |