Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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(add a SEM pic)
(new section :pasted data from CHF3/CF4/O2 etch data)
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|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
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===OLD Etch Test Data===
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Alternate SiO<sub>2</sub> etch recipe with O2 included.
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{| class="wikitable"
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| colspan="5" |ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|
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|-
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|Date
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|Sample#
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|Etch Rate (nm/min)
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|Etch Selectivity (SiO2/PR)
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|Averaged Sidewall Angle (<sup>o</sup>)
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|SEM Images
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|1/28/2019
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|I11902
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|78.1
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|0.63
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|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
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|5/29/2019
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|I11904
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|71.1
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|0.58
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
 
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Revision as of 13:19, 11 February 2022

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]
1/7/2021 I12101 118 1.12 [7]


OLD Etch Test Data

Alternate SiO2 etch recipe with O2 included.

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [8]
5/29/2019 I11904 71.1 0.58 [9]
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