Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add a data poing)
(add a SEM pic)
 
Line 61: Line 61:
 
|1.12
 
|1.12
 
|
 
|
|
+
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
|}
 
|}

Latest revision as of 19:39, 8 January 2021

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]
1/7/2021 I12101 118 1.12 [7]