Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

Revision as of 09:11, 23 April 2020

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
1/28/2019	I11901	110	1.35	see SEM →	[1]
5/29/2019	I11903	105	1.41		[2]
1/13/2020	I12001	78.0	1.06	unusual - two regions	[3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020	I12002	109	1.16		[4]
2/28/2020	I12003	119	1.17	56.6	[5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020	I12004	110	1.05		[6]

@@ Line 1: / Line 1: @@
 {| class="wikitable"
-| colspan="5" |'''ICP#1:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec'''
+| colspan="5" |'''ICP#1 Recipe:'''  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 |
 |-
-|Date
+|'''Date'''
-|Sample#
+|'''Sample#'''
-|Etch  Rate (nm/min)
+|'''Etch  Rate (nm/min)'''
-|Etch  Selectivity (SiO2/PR)
+|'''Etch  Selectivity (SiO2/PR)'''
-|Averaged  Sidewall Angle (<sup>o</sup>)
+|'''Averaged  Sidewall Angle (<sup>o</sup>)'''
-|SEM Images
+|'''SEM Images'''
 |-
 |1/28/2019