Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

Revision as of 18:36, 6 April 2020

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
1/28/2019	I11901	110	1.35		[1]
5/29/2019	I11903	105	1.41		[2]
1/13/2020	I12001	78.0	1.06		[3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020	I12002	109	1.16		[4]
2/28/2020	I12003	119	1.17	56.6	[5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested.
3/3/2020	I12004	110	1.05		[6]

@@ Line 15: / Line 15: @@
 |1.35
 |
-|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
+|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 |-
 |5/29/2019
@@ Line 22: / Line 22: @@
 |1.41
 |
-|[https://www.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
+|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 |-
 |1/13/2020