Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
  
|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 
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|I11903
  
|I11903
 
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Revision as of 16:05, 6 June 2019

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 [1]
5/29/2019 I11903 105 1.41 [2]
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