Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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| colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
| colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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|Date |
|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |SEM Images |
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|1/28/2019 |
|1/28/2019 |
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|1.35 |
|1.35 |
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Revision as of 00:05, 30 January 2019
ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11901 | 110 | 1.35 | [1] |