Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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[https://www.nanotech.ucsb.edu/wiki/index.php/File:I11901.pdf]

Revision as of 12:14, 29 January 2019

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
1/28/19 I11901 110 1.35

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