Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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|'''SEM Images'''
  
|'''SEM Images'''
 
|-
  
|-
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|10/3/2022
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|01/11/2023
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|ND_Pan1_011123
⚫
|ND_Pan1_100322
  
  +
|120
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|1.28
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_011123_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/52/Cs_pan1_011123_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|12/14/2022
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|ND_Pan1_121422
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|118.6
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|1.30
 
|
  
|
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|[https://wiki.nanotech.ucsb.edu/w/images/d/d6/30D_pan1_121422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/2/20/CS_pan1_121422_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
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|12/09/2022
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|ND_Pan1_120922
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|100.6
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|1.01
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|double AuPd coat maybe blur image
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c9/30D_pan1_120922_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/9/97/CS_pan1_120922_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|11/18/2022
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|ND_Pan1_111822
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|132.6
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|1.25
 
|
  
|
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|[https://wiki.nanotech.ucsb.edu/w/images/1/14/30D_pan1_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_pan1_111822_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|11/07/2022
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|ND_Pan1_110722
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|125.7
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|1.35
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|
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|[https://wiki.nanotech.ucsb.edu/w/images/5/54/30D_pan1_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/81/CS_pan1_110722_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|10/21/2022
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|ND_Pan1_102122
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|114.3
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|1.15
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|
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|[https://wiki.nanotech.ucsb.edu/w/images/0/03/30D_pan1_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/29/CS_pan1_102122_002.jpg <nowiki>[CS]</nowiki>]
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|-
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|10/10/2022
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|ND_Pan1_101022
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|127.4
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|1.25
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|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/17/CS_pan1_101022_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/3/2022
  ⚫
|ND_Pan1_100322
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|132.9
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|1.19
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|High etch rate and selectivity.
  +
  +
May be due to angled ridge.
 
|[https://wiki.nanotech.ucsb.edu/w/images/1/1f/30D_10302022_pan1_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f1/CS_10302022_pan1_002.jpg <nowiki>[CS]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/1/1f/30D_10302022_pan1_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f1/CS_10302022_pan1_002.jpg <nowiki>[CS]</nowiki>]
 
|-
  
|-
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|1.01
  
|1.01
 
|This is the old wafer
  
|This is the old wafer
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/CS_Pan1o_092622_002.jpg <nowiki>[CS]</nowiki>]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/07/45D_Pan1o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b7/CS_Pan1o_092622_002.jpg <nowiki>[CS]</nowiki>]
 
|-
  
|-
 
|9/12/2022
  
|9/12/2022
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|5/10/2022
  
|5/10/2022
 
|NP_ICP1_07
  
|NP_ICP1_07
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|146
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|136
 
|1.34
  
|1.34
 
|
  
|

Latest revision as of 09:54, 12 January 2023

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images
01/11/2023 ND_Pan1_011123 120 1.28 [30D][CS]
12/14/2022 ND_Pan1_121422 118.6 1.30 [30D][CS]
12/09/2022 ND_Pan1_120922 100.6 1.01 double AuPd coat maybe blur image [30D][CS]
11/18/2022 ND_Pan1_111822 132.6 1.25 [30D][CS]
11/07/2022 ND_Pan1_110722 125.7 1.35 [30D] [CS]
10/21/2022 ND_Pan1_102122 114.3 1.15 [30D] [CS]
10/10/2022 ND_Pan1_101022 127.4 1.25 [30D] [CS]
10/3/2022 ND_Pan1_100322 132.9 1.19 High etch rate and selectivity.

May be due to angled ridge.

[30D] [CS]
9/26/2022 ND_Pan1n_092622 111.1 0.90 This is the new wafer [30D] [CS]
9/26/2022 ND_Pan1o_092622 114.3 1.01 This is the old wafer [45D] [CS]
9/12/2022 ND_Pan1_091222 128.6 1.33 New Si wafer, higher etch rate/

selectivity

[30D] [CS]
9/01/2022 ND_Pan1_090122 120.9 1.05 [30D] [CS]
8/22/2022 ND_Pan1_082222 112.9 1.08 Etch Rate seems low

and selectivity on the lower side

[45D] [CS]
8/5/2022 ND_Pan 1_080522 115.1 0.90 [30D] [CS]
7/27/2022 ND_Pan1_072722 134.6 1.12 [CS] [30D]
5/10/2022 NP_ICP1_07 136 1.34 [1] [2]
4/26/2022 NP_ICP1_06 139.4 1.36 [1] [2]
4/20/2022 NP_ICP1_05 140 1.13 [1] [2]
4/13/2022 NP_ICP1_04 140.3 1.24 [1] [2]
3/29/2022 NP_ICP1_03 136.9 1.19 [1][2]
3/8/2022 NP_ICP1_02 133.7 1.12 [1] [2]
3/2/2022 NP_ICP1_01 141.4 1.20 [1] [2]
1/7/2021 I12101 118 1.12 [1]
3/3/2020 I12004 110 1.05 [2]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".
2/28/2020 I12003 119 1.17 56.6 [3]
1/23/2020 I12002 109 1.16 [4]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/13/2020 I12001 78.0 1.06 unusual - two regions [5]
5/29/2019 I11903 105 1.41 [6]
1/28/2019 I11901 110 1.35 see SEM → [7]


OLD Etch Test Data

Alternate SiO2 etch recipe with O2 included.

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [8]
5/29/2019 I11904 71.1 0.58 [9]
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