Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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{| class="wikitable"
  
{| class="wikitable"
  +
|+'''ICP#1 Recipe:'''
−
| colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
  
  +
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
  +
|-
  +
|'''Date'''
  +
|'''Sample#'''
  +
|'''Etch Rate (nm/min)'''
  +
|'''Etch Selectivity (SiO2/PR)'''
  +
|'''Comments'''
  +
|'''SEM Images'''
  +
|-
  +
|11/18/2022
  +
|ND_Pan1_111822
  +
|132.6
  +
|1.25
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/30D_pan1_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_pan1_111822_002.jpg <nowiki>[CS]</nowiki>]
 
|-
  
|-
  +
|11/07/2022
−
|Date
  
  +
|ND_Pan1_110722
−
|Sample#
  
  +
|125.7
−
|Etch Rate (nm/min)
  
  +
|1.35
−
|Etch Selectivity (SiO2/PR)
  
  +
|
−
|Averaged Sidewall Angle (<sup>o</sup>)
  
  +
|[https://wiki.nanotech.ucsb.edu/w/images/5/54/30D_pan1_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/81/CS_pan1_110722_002.jpg <nowiki>[CS]</nowiki>]
−
|SEM Images
  
 
|-
  
|-
−
|1/28/2019
 +
|10/21/2022
  +
|ND_Pan1_102122
−
|I11901
  
  +
|114.3
  +
|1.15
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/30D_pan1_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/29/CS_pan1_102122_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/10/2022
  +
|ND_Pan1_101022
  +
|127.4
  +
|1.25
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/40/30D_pan1_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/17/CS_pan1_101022_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/3/2022
  +
|ND_Pan1_100322
  +
|132.9
  +
|1.19
  +
|High etch rate and selectivity.
  +
  +
May be due to angled ridge.
  +
|[https://wiki.nanotech.ucsb.edu/w/images/1/1f/30D_10302022_pan1_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f1/CS_10302022_pan1_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/26/2022
  +
|ND_Pan1n_092622
  +
|111.1
  +
|0.90
  +
|This is the new wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/6/68/30D_Pan1n_092622_002.jpg <nowiki>[30D]</nowiki>] [[https://wiki.nanotech.ucsb.edu/w/images/c/c7/CS_Pan1n_092622_002.jpg <nowiki>CS]</nowiki>]
  +
|-
  +
|9/26/2022
  +
|ND_Pan1o_092622
  +
|114.3
  +
|1.01
  +
|This is the old wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/07/45D_Pan1o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b7/CS_Pan1o_092622_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/12/2022
  +
|ND_Pan1_091222
  +
|128.6
  +
|1.33
  +
|New Si wafer, higher etch rate/
  +
selectivity
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8b/30D_pan1_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/57/CS_pan1_091222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/01/2022
  +
|ND_Pan1_090122
  +
|120.9
  +
|1.05
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/06/30D_pan1_090122_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/1c/CS_pan1_090122_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/22/2022
  +
|ND_Pan1_082222
  +
|112.9
  +
|1.08
  +
|Etch Rate seems low
  +
and selectivity on the lower side
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4e/45D_Pan1_082222_001.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/b/b9/CS_Pan1_082222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/5/2022
  +
|ND_Pan 1_080522
  +
|115.1
  +
|0.90
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b2/30D_08052022_pan1_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/12/CS_08052022_pan1_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|7/27/2022
  +
|ND_Pan1_072722
  +
|134.6
  +
|1.12
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/3/35/CS_004.jpg <nowiki>[CS]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/79/30D_001.jpg <nowiki>[30D]</nowiki>]
  +
|-
  +
|5/10/2022
  +
|NP_ICP1_07
  +
|136
  +
|1.34
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a4/ICP1_07_45D_008.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/ICP1_07_CS_006.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/26/2022
  +
|NP_ICP1_06
  +
|139.4
  +
|1.36
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/20/2022
  +
|NP_ICP1_05
  +
|140
  +
|1.13
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/13/2022
  +
|NP_ICP1_04
  +
|140.3
  +
|1.24
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/29/2022
  +
|NP_ICP1_03
  +
|136.9
  +
|1.19
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/8/2022
  +
|NP_ICP1_02
  +
|133.7
  +
|1.12
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/2/2022
  +
|NP_ICP1_01
  +
|141.4
  +
|1.20
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|1/7/2021
  +
|I12101
  +
|118
  +
|1.12
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
  +
|-
  +
|3/3/2020
  +
|I12004
 
|110
  
|110
−
|1.35
 +
|1.05
 
|
  
|
−
|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
 
|-
  
|-
  +
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
−
|5/29/2019
  
  +
|-
−
|I11903
  
  +
|2/28/2020
−
|105
  
  +
|I12003
−
|1.41
  
  +
|119
  +
|1.17
  +
|56.6
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
  +
|-
  +
|1/23/2020
  +
|I12002
  +
|109
  +
|1.16
 
|
  
|
−
|[https://www.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
  +
|-
  +
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
 
|-
  
|-
 
|1/13/2020
  
|1/13/2020
Line 28: Line 183:
 
|78.0
  
|78.0
 
|1.06
  
|1.06
  +
|unusual - two regions
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
  +
|-
  +
|5/29/2019
  +
|I11903
  +
|105
  +
|1.41
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
  +
|-
  +
|1/28/2019
  +
|I11901
  +
|110
  +
|1.35
  +
|see SEM →
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
  +
|}
  +
  +
  +
===OLD Etch Test Data===
  +
Alternate SiO<sub>2</sub> etch recipe with O2 included.
  +
  +
{| class="wikitable"
  +
| colspan="5" |ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
  +
|
  +
|-
  +
|Date
  +
|Sample#
  +
|Etch Rate (nm/min)
  +
|Etch Selectivity (SiO2/PR)
  +
|Averaged Sidewall Angle (<sup>o</sup>)
  +
|SEM Images
  +
|-
  +
|1/28/2019
  +
|I11902
  +
|78.1
  +
|0.63
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
  +
|-
  +
|5/29/2019
  +
|I11904
  +
|71.1
  +
|0.58
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
 
|}
  
|}

Revision as of 18:23, 21 November 2022

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images
11/18/2022 ND_Pan1_111822 132.6 1.25 [30D][CS]
11/07/2022 ND_Pan1_110722 125.7 1.35 [30D] [CS]
10/21/2022 ND_Pan1_102122 114.3 1.15 [30D] [CS]
10/10/2022 ND_Pan1_101022 127.4 1.25 [30D] [CS]
10/3/2022 ND_Pan1_100322 132.9 1.19 High etch rate and selectivity.

May be due to angled ridge.

[30D] [CS]
9/26/2022 ND_Pan1n_092622 111.1 0.90 This is the new wafer [30D] [CS]
9/26/2022 ND_Pan1o_092622 114.3 1.01 This is the old wafer [45D] [CS]
9/12/2022 ND_Pan1_091222 128.6 1.33 New Si wafer, higher etch rate/

selectivity

[30D] [CS]
9/01/2022 ND_Pan1_090122 120.9 1.05 [30D] [CS]
8/22/2022 ND_Pan1_082222 112.9 1.08 Etch Rate seems low

and selectivity on the lower side

[45D] [CS]
8/5/2022 ND_Pan 1_080522 115.1 0.90 [30D] [CS]
7/27/2022 ND_Pan1_072722 134.6 1.12 [CS] [30D]
5/10/2022 NP_ICP1_07 136 1.34 [1] [2]
4/26/2022 NP_ICP1_06 139.4 1.36 [1] [2]
4/20/2022 NP_ICP1_05 140 1.13 [1] [2]
4/13/2022 NP_ICP1_04 140.3 1.24 [1] [2]
3/29/2022 NP_ICP1_03 136.9 1.19 [1][2]
3/8/2022 NP_ICP1_02 133.7 1.12 [1] [2]
3/2/2022 NP_ICP1_01 141.4 1.20 [1] [2]
1/7/2021 I12101 118 1.12 [1]
3/3/2020 I12004 110 1.05 [2]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".
2/28/2020 I12003 119 1.17 56.6 [3]
1/23/2020 I12002 109 1.16 [4]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/13/2020 I12001 78.0 1.06 unusual - two regions [5]
5/29/2019 I11903 105 1.41 [6]
1/28/2019 I11901 110 1.35 see SEM → [7]


OLD Etch Test Data

Alternate SiO2 etch recipe with O2 included.

ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11902 78.1 0.63 [8]
5/29/2019 I11904 71.1 0.58 [9]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4-ICP1&oldid=160711"