Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

Revision as of 10:09, 30 March 2022

**ICP#1 Recipe:** 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
1/28/2019	I11901	110	1.35	see SEM →	[1]
5/29/2019	I11903	105	1.41		[2]
1/13/2020	I12001	78.0	1.06	unusual - two regions	[3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020	I12002	109	1.16		[4]
2/28/2020	I12003	119	1.17	56.6	[5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020	I12004	110	1.05		[6]
1/7/2021	I12101	118	1.12		[7]
3/2/2022	NP_ICP1_01	141.4	1.20		[1] [2]
3/8/2022	NP_ICP1_02	133.7	1.12		[1] [2]
3/29/2022	NP_ICP1_03	136.9	1.19		[1][2]

Alternate SiO₂ etch recipe with O2 included.

@@ Line 66: / Line 66: @@
 |NP_ICP1_01
 |141.4
+|1.20
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
@@ Line 73: / Line 73: @@
 |NP_ICP1_02
 |133.7
+|1.12
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
@@ Line 80: / Line 80: @@
 |NP_ICP1_03
 |136.9
+|1.19
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]