Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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| colspan="5" |'''ICP#1 Recipe:''' 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
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0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
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|'''Date'''
 
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
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|1/7/2021
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|I12101
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|118
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|1.12
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|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
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Latest revision as of 19:39, 8 January 2021

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]
1/7/2021 I12101 118 1.12 [7]