Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"
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+ | |+'''ICP#1 Recipe:''' |
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− | + | 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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− | |Date |
+ | |'''Date''' |
− | |Sample# |
+ | |'''Sample#''' |
− | |Etch Rate (nm/min) |
+ | |'''Etch Rate (nm/min)''' |
− | |Etch Selectivity (SiO2/PR) |
+ | |'''Etch Selectivity (SiO2/PR)''' |
− | |Averaged Sidewall Angle (<sup>o</sup>) |
+ | |'''Averaged Sidewall Angle (<sup>o</sup>)''' |
− | |SEM Images |
+ | |'''SEM Images''' |
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|1/28/2019 |
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf] |
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+ | |- |
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+ | |1/7/2021 |
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+ | |I12101 |
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+ | |118 |
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+ | |1.12 |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf] |
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Revision as of 19:39, 8 January 2021
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2019 | I11901 | 110 | 1.35 | see SEM → | [1] |
5/29/2019 | I11903 | 105 | 1.41 | [2] | |
1/13/2020 | I12001 | 78.0 | 1.06 | unusual - two regions | [3] |
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal". | |||||
1/23/2020 | I12002 | 109 | 1.16 | [4] | |
2/28/2020 | I12003 | 119 | 1.17 | 56.6 | [5] |
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal". | |||||
3/3/2020 | I12004 | 110 | 1.05 | [6] | |
1/7/2021 | I12101 | 118 | 1.12 | [7] |