Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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{| class="wikitable"
  
{| class="wikitable"
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|+'''ICP#1 Recipe:'''
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| colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
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0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
⚫
|
  
 
|-
  
|-
−
|Date
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|'''Date'''
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|Sample#
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|'''Sample#'''
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|Etch Rate (nm/min)
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|'''Etch Rate (nm/min)'''
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|Etch Selectivity (SiO2/PR)
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|'''Etch Selectivity (SiO2/PR)'''
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|Averaged Sidewall Angle (<sup>o</sup>)
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|'''Averaged Sidewall Angle (<sup>o</sup>)'''
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|SEM Images
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|'''SEM Images'''
 
|-
  
|-
 
|1/28/2019
  
|1/28/2019
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|110
  
|110
 
|1.35
  
|1.35
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|see SEM →
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|
  
−
|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
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|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 
|-
  
|-
 
|5/29/2019
  
|5/29/2019
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|1.41
  
|1.41
 
|
  
|
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|[https://www.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
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|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 
|-
  
|-
 
|1/13/2020
  
|1/13/2020
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|78.0
  
|78.0
 
|1.06
  
|1.06
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|unusual - two regions
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|
  
 
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
  
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
 
|-
  
|-
−
| colspan="6" |1/13 rate is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
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| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
 
|-
  
|-
 
|1/23/2020
  
|1/23/2020
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|1.17
  
|1.17
 
|56.6
  
|56.6
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
  ⚫
|-
  +
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".''
  ⚫
|-
  +
|3/3/2020
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|I12004
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|110
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|1.05
  ⚫
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
  +
|-
  +
|1/7/2021
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|I12101
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|118
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|1.12
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
|}
  
|}

Revision as of 19:39, 8 January 2021

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]
1/7/2021 I12101 118 1.12 [7]
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