Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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(Created page with "{| class="wikitable" | colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged Si...")
 
(add a SEM pic)
 
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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
+
|+'''ICP#1 Recipe:'''
 +
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
|-
 
|-
|Date
+
|'''Date'''
|Sample#
+
|'''Sample#'''
|Etch  Rate (nm/min)
+
|'''Etch  Rate (nm/min)'''
|Etch  Selectivity (SiO2/PR)
+
|'''Etch  Selectivity (SiO2/PR)'''
|Averaged  Sidewall Angle (<sup>o</sup>)
+
|'''Averaged  Sidewall Angle (<sup>o</sup>)'''
 +
|'''SEM Images'''
 
|-
 
|-
|1/28/19
+
|1/28/2019
 
|I11901
 
|I11901
 
|110
 
|110
 
|1.35
 
|1.35
 +
|see SEM →
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 +
|-
 +
|5/29/2019
 +
|I11903
 +
|105
 +
|1.41
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
 +
|-
 +
|1/13/2020
 +
|I12001
 +
|78.0
 +
|1.06
 +
|unusual - two regions
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
 +
|-
 +
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020.  Data below for 1/23 shows rate returned to "normal".''
 +
|-
 +
|1/23/2020
 +
|I12002
 +
|109
 +
|1.16
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
 +
|-
 +
|2/28/2020
 +
|I12003
 +
|119
 +
|1.17
 +
|56.6
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
 +
|-
 +
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".''
 +
|-
 +
|3/3/2020
 +
|I12004
 +
|110
 +
|1.05
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
 +
|-
 +
|1/7/2021
 +
|I12101
 +
|118
 +
|1.12
 
|
 
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
 
|}
 
|}

Latest revision as of 19:39, 8 January 2021

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]
1/7/2021 I12101 118 1.12 [7]