Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (minor formatting)
m (formatting)
Line 1: Line 1:
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |'''ICP#1:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec'''
+
| colspan="5" |'''ICP#1 Recipe:''' 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
|
 
|
 
|-
 
|-
|Date
+
|'''Date'''
|Sample#
+
|'''Sample#'''
|Etch  Rate (nm/min)
+
|'''Etch  Rate (nm/min)'''
|Etch  Selectivity (SiO2/PR)
+
|'''Etch  Selectivity (SiO2/PR)'''
|Averaged  Sidewall Angle (<sup>o</sup>)
+
|'''Averaged  Sidewall Angle (<sup>o</sup>)'''
|SEM Images
+
|'''SEM Images'''
 
|-
 
|-
 
|1/28/2019
 
|1/28/2019

Revision as of 09:11, 23 April 2020

ICP#1 Recipe: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 see SEM → [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 unusual - two regions [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data below shows etch returned to "normal".
3/3/2020 I12004 110 1.05 [6]