Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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(added note about incorrect sidewall profile)
(adda data point)
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|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
 
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
 
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| colspan="6" |Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/4/2020 and re-tested.
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| colspan="6" |Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/24/2020 and re-tested.
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|3/3/2020
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|I12004
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|110
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|1.05
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Revision as of 12:15, 3 March 2020

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 [1]
5/29/2019 I11903 105 1.41 [2]
1/13/2020 I12001 78.0 1.06 [3]
Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".
1/23/2020 I12002 109 1.16 [4]
2/28/2020 I12003 119 1.17 56.6 [5]
Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/24/2020 and re-tested.
3/3/2020 I12004 110 1.05