Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-ICP1"

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| colspan="5" |ICP#1:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
| colspan="5" |ICP#1:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
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|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
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|1/28/2019
 
|1/28/2019
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|1.35
 
|1.35
 
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|[https://www.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
 
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[https://www.nanotech.ucsb.edu/wiki/index.php/File:I11901.pdf]
 

Revision as of 00:05, 30 January 2019

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2019 I11901 110 1.35 [1]