Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine"

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{| class="wikitable"
 
| colspan="5" |Florine ICP:  3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 
| colspan="5" |Florine ICP:  3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
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|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
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|1/29/2021
 
|1/29/2021
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|309
 
|309
 
|0.99
 
|0.99
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Revision as of 16:53, 2 February 2021

Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/29/2021 FE2102 309 0.99