Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine"
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| colspan="5" |Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
| colspan="5" |Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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| + | |SEM Images |
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|1/29/2021 |
|1/29/2021 |
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|309 |
|309 |
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|0.99 |
|0.99 |
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Revision as of 16:53, 2 February 2021
| Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/29/2021 | FE2102 | 309 | 0.99 | ||