Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine"

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(Created page with "{| class="wikitable" | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged...")
 
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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#20.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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| colspan="5" |Florine ICP:  3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 
|-
 
|-
 
|Date
 
|Date
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|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|-
 
|-
|10/5/2018
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|1/29/2021
|SiO2#01
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|FE2102
|95.2
+
|309
|0.74
+
|0.99
|77.9
+
|
 
|}
 
|}

Revision as of 16:50, 2 February 2021

Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
1/29/2021 FE2102 309 0.99