Test Data of etching SiO2 with CHF3/CF4

From UCSB Nanofab Wiki
Revision as of 18:29, 6 April 2020 by Jcrode (talk | contribs) (Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/")
Jump to navigation Jump to search
The printable version is no longer supported and may have rendering errors. Please update your browser bookmarks and please use the default browser print function instead.
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]